发明名称 |
Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
摘要 |
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
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申请公布号 |
US6593152(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US20010985325 |
申请日期 |
2001.11.02 |
申请人 |
EBARA CORPORATION;NIKON CORPORATION |
发明人 |
NAKASUJI MAMORU;SATAKE TOHRU;WATANABE KENJI;MURAKAMI TAKESHI;NOJI NOBUHARU;SOBUKAWA HIROSI;KARIMATA TSUTOMU;YOSHIKAWA SHOJI;KIMBA TOSHIFUMI;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI;TAKAGI TORU;KIHARA NAOTO;NISHIMURA HIROSHI |
分类号 |
G01N23/225;G01Q30/06;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28;(IPC1-7):H01L21/66;G01N23/00 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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