发明名称 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
摘要 The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
申请公布号 US6593152(B2) 申请公布日期 2003.07.15
申请号 US20010985325 申请日期 2001.11.02
申请人 EBARA CORPORATION;NIKON CORPORATION 发明人 NAKASUJI MAMORU;SATAKE TOHRU;WATANABE KENJI;MURAKAMI TAKESHI;NOJI NOBUHARU;SOBUKAWA HIROSI;KARIMATA TSUTOMU;YOSHIKAWA SHOJI;KIMBA TOSHIFUMI;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI;TAKAGI TORU;KIHARA NAOTO;NISHIMURA HIROSHI
分类号 G01N23/225;G01Q30/06;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28;(IPC1-7):H01L21/66;G01N23/00 主分类号 G01N23/225
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