发明名称 Metal ion reduction in novolak resins and photoresists
摘要 The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
申请公布号 US5580949(A) 申请公布日期 1996.12.03
申请号 US19950458588 申请日期 1995.06.02
申请人 HOECHST CELANESE CORPORATION 发明人 RAHMAN, M. DALIL;DURHAM, DANA L.
分类号 C08G8/08;G03F7/023;(IPC1-7):C08G8/04;B01D11/00 主分类号 C08G8/08
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