发明名称 |
Metal ion reduction in novolak resins and photoresists |
摘要 |
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
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申请公布号 |
US5580949(A) |
申请公布日期 |
1996.12.03 |
申请号 |
US19950458588 |
申请日期 |
1995.06.02 |
申请人 |
HOECHST CELANESE CORPORATION |
发明人 |
RAHMAN, M. DALIL;DURHAM, DANA L. |
分类号 |
C08G8/08;G03F7/023;(IPC1-7):C08G8/04;B01D11/00 |
主分类号 |
C08G8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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