| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to prevent the deterioration of a vertical gate property by minimizing the loss of a hard mask layer. CONSTITUTION: A vertical type pillar is formed. An insulation layer and a conductive layer are formed on the whole upper side. An interlayer insulation layer(112) is formed on the whole upper side. A film layer(116) with high density is formed by implanting ions to the interlayer insulation layer. The interlayer insulation layer is etched by using the film layer with high density as the interlayer insulation layer.</p> |
