发明名称 Marker structure and method for controlling alignment of layers of a multi-layered substrate
摘要 The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.
申请公布号 US7879682(B2) 申请公布日期 2011.02.01
申请号 US20090611428 申请日期 2009.11.03
申请人 ASML NETHERLANDS B.V. 发明人 VAN HAREN RICHARD JOHANNES FRANCISCUS;DEN BOEF ARIE JEFFREY;BURGHOORN JACOBUS;VAN DER SCHAAR MAURITS;RIJPERS BART
分类号 H01L21/76;G01B11/00;H01L21/46;H01L21/78;H01L23/544 主分类号 H01L21/76
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