| 摘要 |
PURPOSE: An inductively coupled plasma processing apparatus is provided to form a uniform electric field by arranging a plurality of antenna wires in a spiral shape. CONSTITUTION: A process chamber(4) accommodates a rectangular target and processes the target through plasma. A high frequency antenna(13) is arranged between dielectric members outside of a process chamber. The high frequency antenna comprises more than three rectangular antenna units of a concentric shape. The high frequency antenna receives high frequency power to form an induction magnetic field inside the process chamber. An impedance control unit controls at least one impedance of an antenna circuit included in the antenna unit. An impedance control unit controls the current of the antenna unit. |
