发明名称 Circuits and methods to produce a VPTAT and/or a bandgap voltage
摘要 Provided herein are circuits and methods to generate a voltage proportional to absolute temperature (VPTAT) and/or a bandgap voltage output (VGO). A circuit includes a group of X transistors. A first subgroup of the X transistors are used to produce a first base-emitter voltage (VBE1). A second subgroup of the X transistors are used to produce a second base-emitter voltage (VBE2). The VPTAT can be produced by determining a difference between VBE1 and VBE2. Which of the X transistors are in the first subgroup and used to produce the first base-emitter voltage (VBE1), and/or which of the X transistors are in the second subgroup and used to produce the second base-emitter voltage (VBE2), change over time. Additionally, a circuit portion can be used to generates a voltage complimentary to absolute temperature (VCTAT) using at least one of the X transistors. The VPTAT and the VCTAT can be added to produce the VGO.
申请公布号 US7880459(B2) 申请公布日期 2011.02.01
申请号 US20080111796 申请日期 2008.04.29
申请人 INTERSIL AMERICAS INC. 发明人 HARVEY BARRY
分类号 G05F3/16;G05F3/20 主分类号 G05F3/16
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