发明名称 Thin wafer detectors with improved radiation damage and crosstalk characteristics
摘要 The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. In one embodiment, a photodiode array comprises a substrate having at least a front side and a back side, a plurality of diode elements integrally formed in the substrate forming the array, wherein each diode element has a p+ fishbone pattern on the front side, and wherein the p+ fishbone pattern substantially reduces capacitance and crosstalk between adjacent photodiodes, a plurality of front surface cathode and anode contacts, and wire interconnects between diode elements made through a plurality of back surface contacts.
申请公布号 US7880258(B2) 申请公布日期 2011.02.01
申请号 US20050081366 申请日期 2005.03.16
申请人 UDT SENSORS, INC. 发明人 BUI PETER STEVEN;TANEJA NARAYAN DASS
分类号 H01L31/06;H01L31/00 主分类号 H01L31/06
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