发明名称 Photomask, manufacturing method thereof, and electronic device manufacturing method
摘要 A photomask includes a transparent substrate and an opaque film formed on the transparent substrate. The opaque film is configured to form a device pattern with which a wafer is to be exposed; and at least one pair of assist patterns is formed by the opaque film, one assist pattern on each side of the device pattern on the transparent substrate. The size of each assist pattern of the pair of assist patterns is such that the assist pattern is not resolved on the wafer. A part of each assist pattern of the pair of assist patterns includes step portions.
申请公布号 US7879512(B2) 申请公布日期 2011.02.01
申请号 US20080018495 申请日期 2008.01.23
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 TAKEUCHI KANJI
分类号 G03F1/29;G03F1/32;G03F1/36;G03F1/68;H01L21/00 主分类号 G03F1/29
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