Memory cell with memory element contacting an inverted T-shaped bottom electrode

摘要

Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion having a top surface and a width less than that of the base portion. A memory element is on the top surface of the pillar portion and comprises memory material having at least two solid phases. A top electrode is on the memory element.