| 摘要 |
PURPOSE: A zinc-oxide based light emitting device and a manufacturing method thereof are provided to maximize the quantum confinement effect by reducing the tunneling probability of the charge carriers by controlling the thickness of a quantum barrier layer. CONSTITUTION: A substrate(10) is the base of the epitaxial-growth of an oxidation zinc thin film. The substrate comprises the sapphire, the silicon, the silicon carbide, the quartz, the glass, the gallium arsenide, SCAM, and zinc oxide. A first cladding layer(20) supplies the electrons to an active layer(30) by the power source.
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