发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A METAL ALLOY ELECTRODE |
摘要 |
A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary. |
申请公布号 |
US2011020998(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100841430 |
申请日期 |
2010.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH GYUHWAN;PARK YOUNG-LIM;PARK SOONOH;AHN DONGHO;LEE JINIL |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|