发明名称 METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A METAL ALLOY ELECTRODE
摘要 A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary.
申请公布号 US2011020998(A1) 申请公布日期 2011.01.27
申请号 US20100841430 申请日期 2010.07.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH GYUHWAN;PARK YOUNG-LIM;PARK SOONOH;AHN DONGHO;LEE JINIL
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址