发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.
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申请公布号 |
US2011019494(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100826100 |
申请日期 |
2010.06.29 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
TSUDA HIROSHI;KUBOTA YOSHITAKA;TAKAOKA HIROMICHI |
分类号 |
G11C17/16;H01L21/66;H01L23/525 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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