发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: A nonvolatile semiconductor memory device is provided to reducing costs by simultaneously forming laminate memories. CONSTITUTION: A nonvolatile semiconductor memory(110) a 3D laminated flash memory. The nonvolatile semiconductor memory comprises a memory unit. The memory unit and a controller are formed on the main surface(11a) of a semiconductor substrate(11) which is formed with single-crystal silicon. A circuit unit is formed on the semiconductor substrate.</p>
申请公布号 KR20110009014(A) 申请公布日期 2011.01.27
申请号 KR20100024028 申请日期 2010.03.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KITO MASARU;KATSUMATA RYOTA;FUKUZUMI YOSHIAKI;KIDOH MASARU;TANAKA HIROYASU;KOMORI YOSUKE;ISHIDUKI MEGUMI;FUJIWARA TOMOKO;AOCHI HIDEAKI
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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