发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device is provided to reducing costs by simultaneously forming laminate memories. CONSTITUTION: A nonvolatile semiconductor memory(110) a 3D laminated flash memory. The nonvolatile semiconductor memory comprises a memory unit. The memory unit and a controller are formed on the main surface(11a) of a semiconductor substrate(11) which is formed with single-crystal silicon. A circuit unit is formed on the semiconductor substrate.</p> |
申请公布号 |
KR20110009014(A) |
申请公布日期 |
2011.01.27 |
申请号 |
KR20100024028 |
申请日期 |
2010.03.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITO MASARU;KATSUMATA RYOTA;FUKUZUMI YOSHIAKI;KIDOH MASARU;TANAKA HIROYASU;KOMORI YOSUKE;ISHIDUKI MEGUMI;FUJIWARA TOMOKO;AOCHI HIDEAKI |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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