| 摘要 |
PROBLEM TO BE SOLVED: To achieve a high withstand voltage of a semiconductor device for driving a power device.SOLUTION: In this semiconductor device, an n-type impurity region 121 is formed in a main surface of a p-type substrate 200. A p-well 131 is formed in a main surface of the n-type impurity region 121. An n-type source region 133 of an nMOSFET and connected to a VS terminal is formed in the main surface of the p-well 131. A p-type source region 126 owned by a pMOSFET and connected to a VB terminal is formed in the main surface of the n-type impurity region 121. An n-embedding layer 31 is formed in a p-substrate 200 so as to contact the bottom surface of the n-type impurity region 121 while covering at least the lower part of the n-type source region 133. The n-embedding layer 31 has a second impurity concentration higher than the first impurity concentration of the n-type impurity region 121. |
