| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that generates a high-output, true circle beam.SOLUTION: A current constriction layer 18 and lateral mode adjusting layer 19 are disposed in an upper DBR layer 15. The current constriction layer 18 is formed closer to an active layer 13 than to the lateral mode adjusting layer 19, and the lateral mode adjusting layer 19 is formed farther away from the active layer 13 than the current constriction layer 18. A large-diameter current injection region 19B is formed in a central region of the current constriction layer 18, and a small-diameter light-transmitting region 19A is formed in a central region of the lateral mode adjusting layer 19. The current injection region 19B is formed, in a region other than the central region in the lateral mode adjusting layer 19. |
