发明名称 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is a highly reliable case type by using an electrode terminal improved in stress strength between a stress buffer part and an electrode part (conductive part).SOLUTION: The semiconductor device includes a metal base plate 12 to which an insulating substrate is fixed; a case 10 arranged on the metal base plate and made of an insulating material; a semiconductor element mounted on the insulating substrate; silicon gel charged in the space in the case and above the semiconductor element; and the electrode terminal 20 having the plate-like stress buffer part having a bent part and a pair of flat parts formed integrally at both ends thereof, the electrode part coupled to one flat part, and the conductive part coupled to the other flat part and electrically connected to the semiconductor element. The stress buffer part has a constant thickness, and is thinner than the electrode part and conductive part.
申请公布号 JP2011018933(A) 申请公布日期 2011.01.27
申请号 JP20100207417 申请日期 2010.09.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 IWAASA TATSUYA;OGURI YOSHIHISA
分类号 H01L23/04;H01L23/24;H01L25/07;H01L25/18 主分类号 H01L23/04
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