发明名称 |
Verfahren zur Herstellung eines Halbleiterbauelements mit hoher Durchbruchsspannung |
摘要 |
The invention provides a semiconductor device exhibiting a stable and high breakdown voltage, which is manufactured at a low manufacturing cost. The semiconductor device of the invention includes an n-type silicon substrate; a p-type base region in the surface portion of substrate; an n-type drain region in the surface portion of n-type substrate; a p-type offset region in the surface portion of n-type substrate; an n-type source region in the surface portion of p-type base region; a p-type contact region in the surface portion of p-type base region; a gate electrode above the extended portion of p-type base region extending between n-type source region and n-type substrate (or p-type offset region), with a gate insulation film interposed therebetween; an insulation film on gate electrode and p-type offset region; a source electrode on n-type source region; and a drain electrode on n-type drain region. The p-type offset region is formed of a first p-type sub-region, a second p-type sub-region, and a third p-type sub-region. |
申请公布号 |
DE10165053(B4) |
申请公布日期 |
2011.01.27 |
申请号 |
DE2001165053 |
申请日期 |
2001.01.17 |
申请人 |
FUJI ELECTRIC SYSTEMS CO. LTD. |
发明人 |
MATSUZAKI, KAZUO;FUJISHIMA, NAOTO;KITAMURA, AKIO;TADA, GEN;SATO, MASARU |
分类号 |
H01L21/336;H01L21/266;H01L29/06;H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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