| 摘要 |
<p>A magnetic tunnel junction (2), comprising a reference layer (21) having a fixed magnetization direction, a first storage layer (23) having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer (21) by passing a write current through said magnetic tunnel junction, and an insulating layer (22) disposed between said reference layer (21) and first storage layer (23); characterized in that the magnetic tunnel junction further comprises a polarizing device (25) to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer (21); and wherein said first storage layer (23) has a damping constant such that the switching time of the magnetization is in a range comprised between 1 ns to 100 ns. A magnetic memory device comprising a plurality of magnetic elements formed from the disclosed magnetic tunnel junction (2) having improved write speed and lower power consumption than conventional memory devices.</p> |
