| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film solar cell element having further high short-circuiting current density by extracting free carriers (current) generated in each photoelectric conversion layer by preventing generation of an insulating layer (SiO<SB>2</SB>) in an interface between the photoelectric conversion layer (silicon layer) and a transparent electrode layer to reduce contact resistance, in a thin-film solar cell element of a tandem structure with a plurality of photoelectric conversion layers laminated. <P>SOLUTION: First and second buffer layers 4 and 8 each having a thickness of 50-100 nm are inserted into an interface between an intermediate transparent electrode layer 6 and a first photoelectric conversion layer (silicon layer) 3 and into an interface between a back transparent electrode layer 10 and a second photoelectric conversion layer (silicon layer) 7, respectively. For the first and second buffer layers 4 and 8, a material being a non-oxide-based conductive material, formed in an atmosphere without containing oxygen, easily oxidizable compared to silicon, and keeping high conductivity even when exposed to oxygen to be oxidized, for instance, titanium, hafnium, aluminum or the like added with niobium or gallium, is used. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
