| 摘要 |
A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.
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