| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device having improved end face breakdown level, and to provide a method for manufacturing the nitride semiconductor laser device. SOLUTION: The nitride semiconductor laser device comprises a first cladding layer; an active layer; a second cladding layer having a stripe-like ridge waveguide from a first end face to a second one; and a dielectric film deposited on the side of the ridge waveguide. The ridge waveguide comprises an excitation region, where the dielectric film is deposited on the side and luminescence is generated on the active layer by the injection of current from an upper electrode; a first edge region that is provided between the first end face and the excitation region, where no upper electrodes are provided and the activation rate of second-conductivity impurities in the second cladding layer is lower than that at the excitation region; and a second edge region that is provided between the second end face and the excitation region, where no upper electrodes are provided and the activation rate of second-conductivity impurities in the second cladding layer is lower than that at the excitation region. COPYRIGHT: (C)2006,JPO&NCIPI
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