| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which electrostatic discharge damage of a thin film transistor can be suppressed and reliability is enhanced, and to provide its manufacturing process. SOLUTION: In the semiconductor device having a circuit formed of a plurality of thin film transistors 100, a gate interconnect line 22 connected commonly with a plurality of thin film transistors 100 is divided and the divided gate interconnect lines 22 are connected electrically through a connection interconnect line 29 arranged on an upper layer of the gate interconnect line 22. COPYRIGHT: (C)2006,JPO&NCIPI
|
