发明名称 Thin-film device, method for manufacturing the same, and electronic apparatus
摘要 A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a support layer of mainly clay containing silicate mineral having a layered crystal structure on the separation layer, forming a thin-film functional member on the support layer, applying an energy to the separation layer to reduce the adhesion between the substrate and the support layer, and removing the substrate from the support layer and the thin-film functional member.
申请公布号 US7875510(B2) 申请公布日期 2011.01.25
申请号 US20090465828 申请日期 2009.05.14
申请人 SEIKO EPSON CORPORATION 发明人 ONODERA KATSUYOSHI
分类号 H01L21/84 主分类号 H01L21/84
代理机构 代理人
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