发明名称 Vertical parallel plate capacitor structures
摘要 Vertical parallel plate (VPP) capacitor structures that utilize different spacings between conductive plates in different levels of the capacitor stack. The non-even spacings of the conductive plates in the capacitor stack decrease the susceptibility of the capacitor stack of the VPP capacitor to ESD-promoted failures. The non-even spacings may be material specific in that, for example, the spacings between adjacent conductive plates in different levels of the capacitor stack may be chosen based upon material failure mechanisms for plates containing different materials.
申请公布号 US7876547(B2) 申请公布日期 2011.01.25
申请号 US20070755502 申请日期 2007.05.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GEBRESELASIE EPHREM G.;HE ZHONG-XIANG;VOLDMAN STEVEN H.
分类号 H01G4/008;H01G4/005;H01G4/38 主分类号 H01G4/008
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