METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE USING ASYMMETRIC JUNCTION ION IMPLANTATION

摘要

A method for manufacturing a memory device using an asymmetry junction ion implantation is provided to reduce electric field being applied and to improve refresh characteristic by performing an asymmetry junction ion implantation using a mask pattern for an asymmetry threshold voltage ion implantation. An ion implantation for controlling a threshold voltage is performed on a semiconductor(100). A gate stack(150) is formed on the semiconductor substrate to define a storage node junction region(122) and a bit line junction region(123). A mask pattern(170) covers the storage node junction region and exposes the bit line junction region. First conductive type impurity ion and second conductive type impurity ion are implanted by using the mask pattern. A gate spacer layer is formed on a side of the gate stack. First conductive type impurity ion is implanted by using the gate stack and the gate spacer layer as an ion implantation mask layer to form a storage node junction region and a bit line junction region.