发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that can operate over a wide temperature range and is reducible in leak current.SOLUTION: The semiconductor integrated circuit includes a high-VT logic circuit 3 comprising a MOS transistor having a first threshold voltage, a low-VT logic circuit 4 having the same logic with the high-VT logic circuit 3 and composed of a MOS transistor having a second threshold voltage lower than the first threshold voltage, and a control circuit which makes one of the high-VT logic circuit 3 and low-VT logic circuit 4 operate in accordance with the temperature of a chip mounted with the high-VT logic circuit 3 and low-VT logic circuit 4.
申请公布号 JP2011014575(A) 申请公布日期 2011.01.20
申请号 JP20090154732 申请日期 2009.06.30
申请人 RENESAS ELECTRONICS CORP 发明人 FUKUOKA ATSUHISA
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
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