| 摘要 |
PURPOSE:To obtain a high electron mobility transistor havig high performance depletion mode and enhancement mode while enhancing the manufacturing yield by providing newly a shielding layer to an ordinary high electron mobility transistor having a channel layer of lower layer and an electron supplying layer of upper layer. CONSTITUTION:A non-doped GaAs channel layer 2, a non-doped Al0.3Ga0.7As layer 3, an N type Al0.3Ga0.7As electron supplying layer 4 of approx. 2X10<18>/ cm<3> of impurity density, and an N type GaAs shielding layer 5 of approx. 5X 10<17>/cm<3> of density are laminated and epitaxially grown on an insulated GaAs substrate 1. Subsequently, a plurality of element isolating regions 6 intruding into the layer 2 by a reactive plasma etching is opened with CF4, a hole 8 is opened at the layer 5 on the enhancement type element forming region 7, a gate electrode 12 contacted with the layer 4 is mounted, and source and drain electrodes 10 are covered on the remaining layer 5. A gate electrode 11 contacted with the layer 5 and source and drain electrodes 9 surrounding the electrode 11 are mounted on a depletion type element. |
