| 摘要 |
PROBLEM TO BE SOLVED: To prevent a decrease in yield in a method of manufacturing a semiconductor device.SOLUTION: The method of manufacturing the semiconductor device 1 includes a first step of laminating an insulating film 30 on a base 60, a second step of forming via holes 31 in the insulating film 30, a third step of forming and patterning conductor layers on the insulating film 30 to form wiring 41 and 42 having through-holes 41a and 42a on the via holes 31, and a fourth step of bonding a semiconductor chip 11 facedown so that an electrode 12 may be disposed on the upper part of the through-holes 41a and 42a. |
