| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature sensor of which the sensitivity can be improved, the temperature sensor including a quantum well structure, and to provide a method for manufacturing the sensor.SOLUTION: This temperature sensor 100 detects a change in a current due to change in temperature at a detection section 50 formed on a substrate. The detection section 50 that is formed on the substrate, includes a QW structure 53 having a plurality of barrier layers 53a, 53c and a well layer 53b sandwiched by the barrier layers 53a, 53c; and MQB structures 51, 52 that are respectively formed on both faces of the QW structure 53, each of MQB structures, having a plurality of well layers 51a and a second barrier layer 51b sandwiched by the plurality of second well layers 51a. |
