| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of polishing substrate that exhibits both high polishing speed and planarity of a polished surface in polishing of a metal layer 30 of the substrate provided with the metal layer 30 on an interlayer insulating film 10 through a barrier layer 20.SOLUTION: The metal layer 30 is polished by using a first polishing liquid so as not to expose the barrier layer 20. The first polishing liquid is prepared by mixing, at a predetermined ratio, a first liquid containing an metal oxide dissolving agent, a metal anticorrosive, a metal oxide dissolution control agent and water, and a second liquid containing a metal oxidant. Then the metal layer 30 is polished by using a second polishing liquid which is prepared by mixing the first liquid and the second liquid so that the ratio of the second liquid is larger than that of the first polishing liquid, thereby a portion at an upper section of a protruding section 12 of the interlayer insulating film 10, of the barrier layer 30 is exposed. |
