发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the second conductive line intersects with the first conductive line and electrically connected to the first conductive line and the second conductive line and a mechanical switch disposed between the resistance variation part and the second conductive line. The mechanical switch includes a nanotube.
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申请公布号 |
US2011012081(A1) |
申请公布日期 |
2011.01.20 |
申请号 |
US20100822302 |
申请日期 |
2010.06.24 |
申请人 |
YOON HONGSIK;ZHAO JINSHI;BAEK INGYU;SIM HYUNJUN;PARK MINYOUNG |
发明人 |
YOON HONGSIK;ZHAO JINSHI;BAEK INGYU;SIM HYUNJUN;PARK MINYOUNG |
分类号 |
H01L45/00;H01L29/82 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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