| 摘要 |
PROBLEM TO BE SOLVED: To increase accuracy in detection of high energy radioactive rays by providing an SSD (Silicon Drift Detector) that can thicken a substrate (I layer) of a semiconductor and can use a high-resistivity semiconductor.SOLUTION: In a radiation detector, a P layer is formed on a first surface of the I layer, an island-form N layer is formed on a second surface of the I layer, and an annular P ring is formed around the N layer to concentrate charges generated in the I layer with incoming radioactive rays on the N layer by potential gradient generated by voltages applied to the P layer and the P ring. A first electrode terminal for voltage application is formed on the P layer, a second electrode terminal for voltage application is formed on one P ring provided at a position facing an outer peripheral part of the P layer, an insulating layer is formed between the P ring provided at a position facing an outer peripheral part on a second surface and the N layer, and a ring-shaped electrode terminal for voltage application is formed on a surface of the insulating layer. |
