| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having element regions which are parallelized with minimum processing size widths and capable of suppressing resistance of a contact.SOLUTION: An element region 33a is connected to both ends of a bent part 35, has a linear part 34 of minimum processing size width, and extends in different element region directions 21, and element regions 33b, 33c in the same shape as that of the element region 33a are arranged in parallel with an element isolation region 31 therebetween respectively so that the bent part 35 is located in a word line direction 23 having 45° from the element region direction 21. Contact plugs 41 perpendicular to a semiconductor substrate 11 are connected to bent parts 35 respectively. A a selection gate line 38 common to selection transistors 46 composed of element regions 33 respectively extends on an insulating film 39 nearby the contact plug 41s and in parallel with the word line direction 23, and a word line 37 common to memory cells 45 composed of the element regions 33 respectively extend on the insulating film 39 on the opposite side of the contact plugs 41 from the selection gate line 38 and in parallel with the word line direction 23. |
