发明名称 RADIATION-EMITTING SEMICONDUCTOR CHIP
摘要 A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
申请公布号 KR20110006650(A) 申请公布日期 2011.01.20
申请号 KR20107020193 申请日期 2009.04.17
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 RODE PATRICK;HOPPEL LUTZ;ENGL KARL;ALBRECHT TONY
分类号 H01L27/15;H01L25/16;H01L27/04;H01L33/00;H01L33/38 主分类号 H01L27/15
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