SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
申请公布号
WO2011007677(A1)
申请公布日期
2011.01.20
申请号
WO2010JP61222
申请日期
2010.06.24
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;MIYAKE, HIROYUKI;KUWABARA, HIDEAKI;KAWAMATA, IKUKO