发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
A semiconductor device includes stacked-gate structures including a plurality of cell gate patterns and insulating patterns alternately stacked on a semiconductor substrate and extending in a first direction. Active patterns and gate dielectric patterns are disposed in the stacked-gate structures. The active patterns penetrate the stacked-gate structures and are spaced apart from each other in a second direction intersecting the first direction, and the gate dielectric patterns are interposed between the cell gate patterns and the active patterns and extend onto upper and lower surfaces of the cell gate patterns. The active patterns share the cell gate patterns in the stacked-gate structures.
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申请公布号 |
US2011012189(A1) |
申请公布日期 |
2011.01.20 |
申请号 |
US20100831728 |
申请日期 |
2010.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAEHUN;LIM JU-YOUNG;KIM HANSOO;JANG JAEHOON;SHIM SUNIL;SHIM JAE-JOO |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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