<p>Disclosed is a film-forming apparatus (1) which comprises: a chamber (2) that has a lateral wall and an internal space in which both an object to be processed (W) on which a coating film (L) is formed and a target (3) that has a sputtering surface (3a) are arranged in such a manner that the object to be processed (W) and the target (3) face each other; an exhaust unit (12) for reducing the pressure within the chamber (2); a first magnetic field-generating unit (4) for generating a magnetic field in the internal space where the sputtering surface (3a) is exposed; a direct current power supply (9) for applying a negative direct current voltage to the target (3); a gas-introducing unit (11) for introducing a sputtering gas into the chamber (2); a second magnetic field-generating unit (13) that is arranged in the vicinity of the target (3) and generates a magnetic field so that vertical magnetic field lines pass through a position adjacent to the target (3); and a third magnetic field-generating unit (18) that is arranged in the vicinity of the object to be processed (W) and generates a magnetic field so as to direct the magnetic field lines to the lateral wall of the chamber (2).</p>
