| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduction of a life of a cell transistor by limiting the stress caused by gate voltage, in writing information on a magnetic memory element, which requires large current.SOLUTION: The circuit and method selects one cell at a time in the case of writing a one or a zero as information. When information is to be written on a memory cell 100 for example, only voltage on a word line 200 connected with a gate of the cell transistor 800 of the memory cell 100 is heightened, and at the same time, voltage on a BLC line 40 or on a BLT line 50 along a column containing the memory cell 100 for writing is selectively heightened to a plurality of mutually different levels. Thus, a one or a zero as information is written on the memory cell 100. In this case, the voltage stress applied to a cell transistor of a memory cell not for writing is limited by using a precharge circuit 504 including first and second transistors 510, 511, a precharge power source 505, and a standard power source 506. |
