发明名称 |
Power semiconductor device having a ballast resistor region |
摘要 |
A power semiconductor device has integral source/emitter ballast resistor regions (20). The gate electrode (14,16) has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers (19) on the ends of the gate structures. The ballast resistor regions have little effect on the threshold voltage under normal operating conditions, but rapidly saturate the device during short circuit conditions. <IMAGE> <IMAGE> |
申请公布号 |
EP1104027(B1) |
申请公布日期 |
2011.01.19 |
申请号 |
EP20000121970 |
申请日期 |
2000.10.09 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
BHALLA, ANUP;MURALEEDHARAN SHENOY, PRAVEEN |
分类号 |
H01L29/08;H01L29/749;H01L21/328;H01L21/331;H01L21/332;H01L21/336;H01L29/06;H01L29/739;H01L29/745;H01L29/78 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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