<p>A semiconductor structure includes a GaAs or InP substrate, an In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer.</p>
申请公布号
EP1820219(B1)
申请公布日期
2011.01.19
申请号
EP20050853521
申请日期
2005.12.07
申请人
PICOMETRIX, LLC
发明人
SACKS, ROBERT, N.;JAZWIECKI, MATHEW, M.;WILLIAMSON, STEVEN, L.