发明名称 |
HIERARCHICAL COMMON SOURCE LINE STRUCTURE IN NAND FLASH MEMORY |
摘要 |
<p>Each memory cell string in a generic NAND flash cell block connects to a Common Source Line (CLS). A value for applying to the CSL is centrally generated and distributed to a local switch logic unit corresponding to each NAND flash cell block. For source-line page programming, the distribution line may be called a Global Common Source Line (GCSL). In an array of NAND flash cell blocks, only one NAND flash cell block is selected at a time for programming. To reduce power consumption, only the selected NAND flash cell block receives a value on the CSL that is indicative of the value on the GCSL. Additionally, the CSLs of non-selected NAND flash cell blocks may be disabled through an active connection to ground.</p> |
申请公布号 |
EP2220653(A4) |
申请公布日期 |
2011.01.19 |
申请号 |
EP20080865169 |
申请日期 |
2008.12.19 |
申请人 |
MOSAID TECHNOLOGIES INCORPORATED |
发明人 |
PYEON, HONG BEOM;KIM, JIN-KI |
分类号 |
G11C16/30 |
主分类号 |
G11C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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