发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which is improved in uniformity of plasma treatment. SOLUTION: The plasma treatment apparatus includes: a treatment chamber 1; a shower plate 11 for supplying a gas into the treatment chamber; a gas distribution plate 10 provided with a partition member 12 for dividing an area on the inner side of the shower plate and an area on the outer side; two gas supply systems 22-1,3 and 22-2,4 for respectively supplying a treatment gas to the area on the inner side and the area on the outer side of the gas distribution plate; an evacuation means 25; an electrode 4 capable of mounting a body to be treated; and an electromagnetic wave radiation power source 5A. Each of the two gas supply systems is provided with an additional gas supply system for adding an oxygen (O<SB>2</SB>) gas or a nitrogen (N<SB>2</SB>) gas as a second gas with a prescribed flow rate through gas flow rate adjusters 13-9,10. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008311686(A) 申请公布日期 2008.12.25
申请号 JP20080250994 申请日期 2008.09.29
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KOBAYASHI HIROYUKI;MAEDA KENJI;YOKOGAWA KATANOBU;IZAWA MASARU;KANEKIYO TADAMITSU
分类号 H01L21/3065 主分类号 H01L21/3065
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