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发明名称
High breakdown voltage semiconductor device and process for fabricating the same
摘要
申请公布号
EP1213766(B1)
申请公布日期
2011.01.19
申请号
EP20010127071
申请日期
2001.11.14
申请人
INFINEON TECHNOLOGIES AG
发明人
WEBER, HANS, DR.;AHLERS, DIRK, DR.;STENGL, JENS-PEER;DEBOY, GERALD, DR.;RUEB, MICHAEL, DR.;MARION, MIGUEL CUADRON;WILLMEROTH, ARMIN
分类号
H01L29/06;H01L21/336;H01L29/10;H01L29/78
主分类号
H01L29/06
代理机构
代理人
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地址
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