| 摘要 |
A semiconductor memory device includes a sense amplifier which senses identical multilevel data, which is stored in a memory cell, a plurality of number of times at a time of read, and a n-channel MOS transistor which has a current path one end of which is connected to the sense amplifier and the other end of which is connected to a bit line. The device further include a control unit which applies a first voltage to a gate electrode of the n-channel MOS transistor, thereby setting the n-channel MOS transistor in an ON state, and applies a second voltage which is higher than the first voltage, to the gate electrode during a period after first sense and before second sense.
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