RRAM CELL HAVING INSERTION LAYER WITH PRAM MATERIAL AND RRAM ARRAY USING THE SAME

摘要

PURPOSE: A resistive-random-access-memory(RRAM) including a phase-change-random-access-memory(PRAM) material layer as an insertion layer and the RRAM array using the same are provided to improve the integrity of the RRAM using the PRAM material layer for operating a conduction route. CONSTITUTION: One or more PRAM material layers(42) are interposed in RRAM material layers(22, 24) as insertion layers. Surrounding electrodes(32, 34) are formed on both sides of each PRAM material layer. Either of surrounding electrodes includes a protrusion part. The protrusion part protruded toward a neighboring RRAM material layer. Each PRAM material layer opens and closes a conduction route.