发明名称 CHEMICAL VAPOR DEPOSITON FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: The chemical vapor deposition apparatus of a semiconductor substrate is provided to uniformly form a deposition film on a plurality of substrates loaded on a boat by differently controlling the amount of spray according to the locations of spraying holes. CONSTITUTION: A tube secures a space in which a deposition process is implemented using a source gas. An exhaust hole(125) is formed at one side of the tube in order to exhaust a remained gas. A heating chamber heats the tube with high temperature. Substrates are loaded on each slot of a boat(140). Injector sprays the source gas toward the substrates on the boat through a plurality of spraying holes.
申请公布号 KR20110005073(A) 申请公布日期 2011.01.17
申请号 KR20090062593 申请日期 2009.07.09
申请人 SEMES CO., LTD. 发明人 LEE, HAN SANG
分类号 H01L21/205;H01L21/02 主分类号 H01L21/205
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