| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer that has a polysilicon layer formed on a reverse side of a silicon crystal substrate doped with phosphor (P) and germanium (Ge), and has superior gettering capability.SOLUTION: On the reverse side of the silicon crystal substrate doped with phosphor and germanium to high concentration, the polysilicon layer is grown at a process temperature of <600°C. Consequently, the number of LPDs (Light Point Defects) (due to SFs(Stacking Faults)) generated on the top surface of the epitaxial silicon wafer owing to the SFs can be greatly decreased. |
