发明名称 HIGH-VOLTAGE IMPULSE AMPLIFIER
摘要 A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.
申请公布号 US2011006847(A1) 申请公布日期 2011.01.13
申请号 US20090922491 申请日期 2009.04.03
申请人 LEHIGH UNIVERSITY 发明人 HALDER SUBRATA;JIN RENFENG;HWANG JAMES C.M.
分类号 H03F3/04 主分类号 H03F3/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利