METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE

摘要

Provided is a method for manufacturing a semiconductor optical device including a semiconductor layer, wherein a first dielectric film (26) is formed on a first region of the surface of a semiconductor laminated structure (12-18), a second dielectric film (25) having a higher density than the first dielectric film (26) is formed on a second region of the surface of the semiconductor laminated structure (12-18), and a window region (23) is formed in the semiconductor laminated structure (12-18) under the first dielectric film (26) by performing heat treatment in a temperature range in which the bandgap variation due to the heat treatment of a semiconductor layer under the second dielectric film (25) is larger than the bandgap variation due to the heat treatment of the semiconductor layer under the first dielectric film (26).