发明名称 |
MAGNETORESISTIVE DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA).SOLUTION: The magnetoresistive device includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in the matrix of magnesium oxide. The spacer layer is formed by the mixture of copper and magnesium oxide, which is heat-treated to form the copper current confined paths within the magnesium oxide matrix. |
申请公布号 |
JP2011009748(A) |
申请公布日期 |
2011.01.13 |
申请号 |
JP20100143664 |
申请日期 |
2010.06.24 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
HE QING;CHEN YONGHUA;DING JUREN |
分类号 |
H01L43/12;G11B5/39;H01L43/08;H01L43/10 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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